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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 6.2A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：6.2A (Ta)
- Rds On (Max) @ Id, Vgs：35mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：544pF @ 50V
- Power - Max：1.4W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (SWP) (Type UXD)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMTH10H032SDVWQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 26 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 30 mΩ at 10 V gate drive. It utilizes the PowerDI3333-8(SWP)UX package, which supports surface mount installation with wettable flanks for enhanced inspection reliability. The component operates within a junction temperature range of -55°C to 175°C.
Feature Summary
- Utilizes PowerDI3333-8(SWP)UX package design with wettable side walls to facilitate automated optical inspection of solder joints.
- Engineered for high thermal efficiency in compact surface-mount layouts suitable for dense PCB applications.
- Provides robust switching performance with low gate charge characteristics optimized for driver compatibility.
Applications
- DC-DC converter circuits requiring high current density
- Power management modules in portable electronic devices
- Synchronous rectification stages in power supplies
Procurement Notes
Verify the specific suffix 'SDVWQ' against official Diodes Incorporated documentation to confirm the exact reel packaging configuration and quality grade. Ensure that the wettable flank specification aligns with your assembly line's AOI requirements. Cross-reference the datasheet revision date to validate parameter consistency before finalizing procurement orders.
Selection Notes
Select this component when a 100 V rating and 26 A current capacity are required in a minimal footprint. The 30 mΩ on-resistance offers a balance between conduction loss and cost. Consider the SWP package variant if visual inspection of bottom-side solder joints is mandatory for your quality control standards.
Part Context
This part belongs to the DMTH series of high-performance MOSFETs from Diodes Incorporated. The series focuses on delivering superior current handling capabilities within small outline packages. The specific model integrates advanced silicon technology to minimize resistance while maintaining thermal stability in demanding power electronics environments.
Replacement Considerations
Publicly confirmed substitute part numbers for DMTH10H032SDVWQ-7 were not identified in the provided source material. Verify pinout and electrical parameters carefully if considering alternative manufacturers or different package variants within the same family.
