DMTH10H071LFDFW-7

$0.15

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:8b39b7418426 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：68mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：296 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：U-DFN2020-6 (SWP) (Type UXG)
Package / Case：6-UDFN Exposed Pad

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DMTH10H071LFDFW-7

Overview

The DMTH10H071LFDFW-7 is a 100V N-channel enhancement mode MOSFET designed for automotive applications. It operates up to +175°C junction temperature and meets AEC-Q101 standards with PPAP support. The device features a U-DFN2020-6/SWP package with a 0.6mm profile. Key electrical parameters include a drain-source breakdown voltage of 100V, a maximum on-resistance of 68mΩ at VGS=10V, and a continuous drain current of 4.6A at TA=+25°C.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Ensures robust end application reliability through 100% unclamped inductive switching (UIS) testing in production
Minimizes on-state losses via low RDS(ON) characteristics
Features sidewall plating to improve optical inspection capabilities

Applications

Power-management functions
DC-DC converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit reel packaging configuration. Confirm that the component meets the required automotive grade specifications, including AEC-Q101 qualification and PPAP capability, as these are critical for the intended automotive use cases. Ensure the U-DFN2020-6/SWP package dimensions align with the PCB footprint requirements.

Selection Notes

Select this component when designing circuits requiring high thermal stability up to +175°C and robust UIS performance. The low-profile 0.6mm package is suitable for space-constrained layouts. Consider the gate threshold voltage range and on-resistance values at various gate voltages to ensure compatibility with the driving circuitry and efficiency targets.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio, specifically engineered for high-reliability environments. It utilizes a specialized U-DFN2020-6/SWP package designed to facilitate improved optical inspection through sidewall plating. The product is manufactured in IATF 16949 certified facilities to meet stringent automotive quality standards.

Replacement Considerations

For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. These alternatives maintain similar qualifications but adhere to stricter manufacturing protocols.