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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI10
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：250A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：147 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：9871 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：6W (Ta), 250W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI1012-8
- Package / Case：8-PowerSFN
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Overview
The DMTH10H1M7STLWQ-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the POWERDI1012-8 (TOLL) surface-mount package and is qualified to AEC-Q101 standards for automotive applications. The device features a maximum drain-source voltage of 100V, a continuous drain current of 250A at +25°C case temperature, and a typical on-resistance of 1.4mΩ at VGS=10V and ID=30A. It supports an operating junction temperature range from -55°C to +175°C.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features wettable flanks to facilitate improved optical inspection during assembly
- Manufactured in IATF 16949 certified facilities with PPAP capability
Applications
- Motor control systems
- DC-DC converters
- Power management circuits
Procurement Notes
Verify that the specific ordering suffix matches the required tape and reel quantity. Confirm compliance with RoHS 3 directives and ensure the component meets the necessary automotive quality standards for the intended deployment environment before finalizing procurement.
Selection Notes
Select this component when designing for high-current switching applications requiring robust thermal performance and low conduction losses. Ensure the gate drive circuitry can support the specified threshold voltage and total gate charge requirements for optimal switching efficiency.
Part Context
This part belongs to the DMTH10 series of automotive-grade MOSFETs designed for high reliability. It is produced in facilities certified under IATF 16949 standards and includes full production support documentation such as PPAP files for integration into regulated supply chains.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Do not assume functional equivalence based solely on package type or voltage ratings without verifying electrical parameters against the original datasheet.
FAQ
Is the DMTH10H1M7STLWQ-13 suitable for high-temperature automotive environments?
Yes, the device is rated to operate at junction temperatures up to +175°C, making it suitable for high ambient temperature automotive applications.
What packaging feature aids in automated optical inspection?
The POWERDI1012-8 package includes wettable flanks, which allow for visual verification of solder joint integrity through automated optical inspection.
