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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：153A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：116 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6239 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：4W (Ta), 150W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH10H2M2LPSW-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features a drain-source voltage rating of 100V and supports continuous drain currents up to 153A at +25°C case temperature. The device offers a maximum on-resistance of 3.2mΩ at VGS=10V and 4.5mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Engineered for high-efficiency power management with minimized on-state resistance and superior switching performance.
- Rated for operation in high ambient temperature environments up to +175°C.
- Features wettable flank terminals to facilitate improved optical inspection during assembly.
- Manufactured as a lead-free, halogen-free, and antimony-free green device compliant with RoHS directives.
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2500 units per reel. Confirm that the required application environment aligns with the standard commercial/automotive grade specifications provided in this datasheet revision. Ensure thermal design accounts for the specified junction-to-case thermal resistance values under intended load conditions.
Selection Notes
Select this component when a 100V N-channel MOSFET is required for applications demanding low conduction losses and robust switching capabilities. The PowerDI5060-8 package provides a compact footprint suitable for space-constrained designs. Consider the +175°C rating for high-temperature operational requirements and verify gate drive voltages against the specified RDS(ON) thresholds.
Part Context
This part belongs to the DMTH10H series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. These devices are designed to balance low on-resistance with fast switching speeds. The DMTH10H2M2LPSW variant specifically utilizes the PowerDI5060-8/SWP package, which includes wettable flank technology for enhanced solder joint visibility and reliability.
Replacement Considerations
An automotive-compliant version of this component is available under the separate part number DMTH10H2M2LPSWQ. Verify if the specific automotive qualification requirements necessitate the Q-suffix variant over the standard DMTH10H2M2LPSW-13.
