DMTH10H2M5STLWQ-13

$4.31

Description：MOSFET BVDSS: 61V~100V,POWERDI10
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:404230e3ca33 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V,POWERDI10
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：215A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：124.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：8450 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：5.8W (Ta), 230.8W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI1012-8
Package / Case：8-PowerSFN

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DMTH10H2M5STLWQ-13

Overview

The DMTH10H2M5STLWQ-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the POWERDI1012-8 (TOLL) package and is rated for operation up to +175°C. The device features a maximum on-resistance of 2.2mΩ at VGS=10V, with a continuous drain current of 229A at TC=+25°C. It supports a pulsed drain current of 916A and has a thermal resistance from junction to case of 0.65°C/W.

Feature Summary

Rated for high ambient temperature environments with an operating junction temperature up to +175°C
Features wettable flank terminals to improve optical inspection reliability during manufacturing
Qualified to AEC-Q101 standards and supported by PPAP documentation for automotive applications

Applications

Motor control systems
DC-DC converters
Power management circuits

Procurement Notes

Verify that the specific ordering suffix matches the required tape and reel quantity of 1500 units. Confirm compliance with RoHS 3 directives and ensure the component meets IATF 16949 facility requirements if intended for automotive assembly lines. Validate datasheet revision against the production batch.

Selection Notes

Select this component when low on-state losses are critical due to its optimized TOLL package design. Consider the 175°C rating for high-temperature operational environments where standard silicon limits would fail. Ensure gate drive capabilities align with the specified total gate charge for efficient switching performance.

Part Context

This part belongs to the DMTH10 series of automotive-grade MOSFETs designed for high-current applications. It represents Diodes Incorporated's integration of advanced packaging technologies to reduce parasitic inductance while maintaining robust thermal dissipation capabilities suitable for demanding power electronics.

Replacement Considerations

Direct substitutes within the same family include DMTH10H1M7STLWQ-13 and DMTH8001STLWQ-13. Verify pin compatibility and thermal characteristics before swapping, as variations in on-resistance and current handling may affect system performance.