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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：164A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：116 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6239 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：4W (Ta), 150W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH10H2M8LPSWQ is a 100V N-channel enhancement mode MOSFET designed for automotive applications. It operates up to +175°C and meets AEC-Q101 standards with PPAP capability. The device features a PowerDI5060-8/SWP package. Key electrical parameters include a maximum on-resistance of 2.8mΩ at VGS=10V and 4.2mΩ at VGS=4.5V. Continuous drain current reaches 164A at TC=+25°C, with a pulsed current of 656A. Total gate charge is 116nC at VGS=10V.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Manufactured in IATF16949 certified facilities with AEC-Q101 qualification and PPAP capability
- Features wettable flank design to facilitate improved optical inspection
- Undergoes 100% unclamped inductive switching (UIS) testing during production
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the complete part number including the -13 suffix when ordering, as it specifies the tape and reel packaging configuration. Confirm that the specific revision of the datasheet matches the manufacturing date code on the components received. Ensure compliance with RoHS 3 and REACH regulations if required by your regional standards before finalizing procurement contracts.
Selection Notes
Select this component for designs requiring robust performance in high-temperature automotive environments. The low on-resistance minimizes conduction losses, while the fast switching speed supports efficient power conversion. Verify that the thermal management solution can handle the specified junction-to-case thermal resistance to maintain reliability under continuous load conditions.
Part Context
This device belongs to the DMTH10 series from Diodes Incorporated, which focuses on high-current, low-resistance MOSFETs. The PowerDI5060-8 package provides a compact footprint suitable for space-constrained automotive PCB layouts. The SWP variant indicates the inclusion of wettable flanks for enhanced solder joint visibility and quality assurance during automated assembly processes.
Replacement Considerations
Consult the official Diodes Incorporated documentation for verified substitute part numbers within the same product family or equivalent specifications.
