DMTH10H4M5LPSW-13

$0.70

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:bc8449ffcf70 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：20A (Ta), 107A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4843 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：4.7W (Ta), 136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH10H4M5LPSW-13

Overview

The DMTH10H4M5LPSW-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of 100V and a maximum continuous drain current (ID) of 107A at TC = +25°C. The device offers a low on-resistance (RDS(ON)) of 4.9mΩ at VGS = 10V and 6.7mΩ at VGS = 4.5V. Operating temperatures range from -55°C to +175°C.

Feature Summary

Ensures robust end applications through 100% Unclamped Inductive Switching (UIS) testing during production.
Minimizes on-state losses via low RDS(ON) while maintaining superior switching performance.
Provides high conversion efficiency supported by low input capacitance and fast switching speed.

Applications

Motor controls
DC-DC converters
Power managements

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration with a packing quantity of 2,500 units. Confirm that the component meets RoHS directives and is halogen and antimony free for compliance requirements. Ensure the selected part matches the PowerDI5060-8 physical dimensions for PCB layout compatibility.

Selection Notes

Select this component for designs requiring a 100V rating with high current handling capabilities up to 107A. Evaluate thermal management needs based on the junction-to-case thermal resistance of 1.1°C/W. Consider the gate threshold voltage characteristics for appropriate drive circuit design. Verify that the operating temperature range aligns with the intended environmental conditions.

Part Context

This device belongs to the DMTH series of advanced N-channel MOSFETs designed for power management applications. It utilizes silicon technology within a molded plastic PowerDI package rated UL 94V-0. The product is manufactured in facilities compliant with IATF 16949 standards for automotive quality requirements.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-reference electrical parameters such as BVDSS, RDS(ON), and package dimensions before substitution.