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Product Detailed Parameters
- Description：MOSFET BVDSS: 101V~250V POWERDI5
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：120 V
- Current - Continuous Drain (Id) @ 25°C：84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：8.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3142 pF @ 60 V
- FET Feature：-
- Power Dissipation (Max)：3.5W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH12H007SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 120V and operates within a junction temperature range of -55°C to +175°C. The device provides a continuous drain current (ID) of 84A at TC = +25°C, with a maximum on-state resistance (RDS(ON)) of 8.9mΩ at VGS = 10V and 16mΩ at VGS = 6V. It utilizes the PowerDI5060-8 surface-mount package.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features a thermally efficient package profile under 1.1mm for thin applications
- Manufactured using lead-free finish materials that are RoHS compliant
- Halogen and antimony free "Green" device construction
Applications
- Switching circuits
- DC-DC converters
- High efficiency power management systems
Procurement Notes
Verify the specific ordering suffix matches the required tape and reel quantity of 2,500 units. Confirm compliance with relevant environmental directives such as RoHS 2 and RoHS 3. Ensure the selected component meets the thermal requirements for the intended operating environment, specifically the maximum junction temperature rating.
Selection Notes
Select this component when designing for high conversion efficiency and low on-state losses. Consider the 120V breakdown voltage and 84A continuous current capability for robust power handling. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation in the target application layout.
Part Context
This part belongs to the DMTH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power management applications requiring reliable operation in demanding thermal conditions.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching critical electrical parameters including BVDSS, RDS(ON), ID, and package dimensions.
