DMTH15H017LPSW-13

$2.10

Description：MOSFET BVDSS: 101V~250V POWERDI5
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d5f22008e6f5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 101V~250V POWERDI5
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：8A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：17.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3369 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta), 107W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

Download product information

DMTH15H017LPSW-13

Overview

The DMTH15H017LPSW-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of 150V and a maximum continuous drain current (ID) of 50A at TC = +25°C. The device offers a low on-resistance (RDS(ON)) of 17.5mΩ at VGS = 10V and 25.5mΩ at VGS = 4.5V. It supports a junction temperature range of -55°C to +175°C and includes 100% UIS testing for reliability.

Feature Summary

Rated for operation up to +175°C junction temperature
Features 100% unclamped inductive switching (UIS) test verification
Utilizes a thermally efficient PowerDI5060-8 package with less than 1.1mm profile
Compliant with RoHS directives and halogen/antimony-free standards

Applications

Notebook battery power management
Load switch circuits
Synchronous rectification
Power switching applications
Class D audio amplifiers

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as defined in the official datasheet. Confirm that the required automotive compliance level is met by selecting the separate DMTH15H017LPSWQ variant if AEC-Q qualification is strictly necessary for the target application environment.

Selection Notes

Select this component when high conversion efficiency and minimized on-state losses are critical. The low input capacitance and fast switching speed make it suitable for high-frequency power applications. Ensure thermal design accounts for the specified RθJC of 1.4°C/W under case-mounted conditions to maintain performance within the rated temperature limits.

Part Context

This part belongs to Diodes Incorporated's new generation of N-Channel Enhancement Mode MOSFETs designed to minimize RDS(ON) while maintaining superior switching performance. It is distinct from the automotive-compliant version (DMTH15H017LPSWQ), which is documented under a separate datasheet but shares similar electrical characteristics.

Replacement Considerations

For automotive-grade requirements, consider the DMTH15H017LPSWQ. Verify pinout compatibility and thermal resistance specifications against existing designs before substitution.