DMTH15H017SPS-13

Overview

The DMTH15H017SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 150 V and a gate-source voltage (VGSS) rating of ±20 V. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 19 mΩ at VGS = 10 V and 22 mΩ at VGS = 8 V. Continuous drain current (ID) reaches 61 A at TC = +25°C and 40 A at TC = +100°C. Pulsed drain current (IDM) is rated at 250 A. Total power dissipation (PD) is 1.5 W at TA = +25°C and 107 W at TC = +25°C. Thermal resistance from junction to case (RθJC) is 1.4 °C/W. Operating and storage temperature range spans -55°C to +175°C.

Feature Summary

• Rated for operation up to +175°C, suitable for high ambient temperature environments
• 100% unclamped inductive switching (UIS) tested in production for robustness
• Thermally efficient PowerDI5060-8 package design for cooler running applications
• Low input capacitance and fast switching speed for high conversion efficiency

Applications

• Motor Control
• DC-DC Converters
• Power Management

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2,500 units per the manufacturer's documentation. Confirm that the component meets RoHS compliance and halogen-free requirements if mandated by your project specifications. Ensure the selected variant matches the exact PowerDI5060-8 pin configuration and marking codes defined in the official datasheet to guarantee mechanical and electrical compatibility during assembly.

Selection Notes

Select this component when a 150V N-channel MOSFET with low RDS(ON) is required for space-constrained designs utilizing the PowerDI5060-8 footprint. Consider its thermal characteristics, specifically the 1.4 °C/W junction-to-case resistance, for heat sink calculations. Evaluate the gate threshold voltage range and total gate charge against your driver capabilities to ensure optimal switching performance within the specified operating temperature range.

Part Context

This part belongs to Diodes Incorporated's generation of N-channel enhancement mode MOSFETs designed to minimize on-state losses while maintaining superior switching performance. The DMTH series utilizes silicon technology and is housed in the PowerDI family of surface-mount packages. These devices are engineered for applications demanding high reliability and thermal efficiency in compact form factors.

Replacement Considerations

Consult the official Diodes Incorporated cross-reference tools or contact technical support for verified substitute part numbers. Do not assume functional equivalence based solely on similar voltage or current ratings without verifying pinout, package dimensions, and electrical parameter limits against the original datasheet.

FAQ

What is the maximum continuous drain current at a case temperature of +100°C?

The maximum continuous drain current (ID) at a case temperature (TC) of +100°C is 40 A.

Is the device qualified for automotive applications?

For automotive applications requiring specific change control, AEC-Q100/101/200 qualification, PPAP capability, and manufacturing in IATF 16949 certified facilities, customers must contact Diodes Incorporated directly.

What is the typical total gate charge (Qg) under standard test conditions?

The typical total gate charge (Qg) is 34 nC, measured at VDD = 75V, ID = 20A, and VGS = 10V.