DMTH15H053SPSWQ-13

$0.32

Description：MOSFET BVDSS: 101V~250V POWERDI5
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:799f500bda04 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 101V~250V POWERDI5
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：66mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：814 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta), 107W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

Download product information

DMTH15H053SPSWQ-13

Overview

The DMTH15H053SPSWQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 150V drain-source breakdown voltage and a maximum continuous drain current of 25A at +25°C case temperature. The device exhibits a typical on-resistance of 46mΩ (maximum 66mΩ) at VGS=10V and ID=20A, with a gate charge of 11.5nC. It operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI5060-8/SWP package.

Feature Summary

Rated for operation up to +175°C junction temperature
100% unclamped inductive switching (UIS) tested in production
Thermally efficient PowerDI® package with less than 1.1mm profile
AEC-Q101 qualified and PPAP capable for automotive applications

Applications

Power-management functions
DC-DC converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the component meets RoHS 3 compliance and Halogen/Antimony-free requirements as defined by the manufacturer's quality definitions. Ensure the application environment supports the specified thermal resistance values for both ambient and case-mounted conditions.

Selection Notes

Select this component when designing circuits requiring high-voltage handling up to 150V combined with low conduction losses. The low gate charge facilitates fast switching speeds suitable for high-frequency power management topologies. Consider the thermal performance characteristics if operating in high ambient temperature environments or space-constrained thin applications.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It is designed using silicon technology and housed in the PowerDI5060-8/SWP surface-mount package. The device is intended for use in robust end applications requiring reliability under harsh thermal conditions.