SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DMTH3002LPSQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source breakdown voltage (BVDSS) and supports a continuous drain current of 240A at case temperature, with a maximum on-resistance of 1.2 milliohms. The device utilizes the PowerDI5060-8 surface-mount package, enabling high thermal efficiency with power dissipation ratings up to 136W at case temperature. It operates within a junction temperature range of -55°C to +175°C and holds AEC-Q101 automotive qualification.
Verify component authenticity by cross-referencing the manufacturer part number with official Diodes Incorporated documentation. Confirm that the specific suffix indicates the required automotive qualification status. Ensure the ordering quantity aligns with standard reel packaging requirements specified in the datasheet. Validate compliance with RoHS directives prior to integration into final assemblies.
Select this component when designing circuits requiring high current handling capabilities within a compact surface-mount footprint. The low on-resistance makes it suitable for efficient power management solutions where thermal performance is critical. Consider the 30V rating for low-voltage automotive and industrial bus architectures.
This part belongs to the DMTH series of automotive-qualified MOSFETs from Diodes Incorporated. It shares the PowerDI5060-8 package form factor with other devices in the lineup but offers distinct electrical characteristics optimized for high-current switching applications. The series targets rugged electronic environments requiring extended temperature operation.
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing the original component in existing designs.