DMTH31M1LPSWQ-13

$0.62

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:4048e3e34149 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：40A (Ta), 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：0.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：86 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5398 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.8W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH31M1LPSWQ-13

Overview

The DMTH31M1LPSWQ-13 is a 30V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source voltage of 30V and a gate-source voltage rating of ±20V. At VGS=10V, the on-resistance is 0.95mΩ with a continuous drain current of 130A at TC=+25°C. At VGS=4.5V, RDS(ON) is 1.5mΩ with an ID of 111A. The device supports a junction temperature up to +175°C and includes 100% UIS testing.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Thermally efficient package design for cooler running applications
High conversion efficiency with minimized on-state losses
Suitable for automotive applications requiring specific change control

Applications

Notebook battery power management
Load switches
Body control electronics
DC-DC converters

Procurement Notes

Verify the complete part number including the -13 suffix against official Diodes Incorporated documentation to ensure correct tape and reel packaging specifications. Confirm that the required AEC-Q101 qualification and IATF 16949 manufacturing standards align with your specific project requirements before finalizing procurement.

Selection Notes

Select this component when low on-resistance and high thermal performance are critical for space-constrained designs. The thin profile makes it suitable for thin applications. Ensure the drive voltage matches the specified thresholds for optimal conduction characteristics and switching efficiency.

Part Context

This device belongs to Diodes Incorporated's new generation MOSFET lineup designed to minimize RDS(ON) while maintaining superior switching performance. It utilizes the PowerDI®5060-8/SWP (Type UX) package, which provides a compact footprint with enhanced thermal dissipation capabilities compared to standard packages.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-referencing requires matching BVDSS, RDS(ON), package type, and thermal ratings to ensure functional compatibility without compromising system reliability or safety margins.

FAQ

Is the DMTH31M1LPSWQ-13 qualified for automotive use?

Yes, the device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.