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Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A PWRDI
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：187 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：14023 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.09W (Ta), 187.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (Type K)
- Package / Case：8-PowerTDFN
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Overview
The DMTH4001SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 surface-mount package and operates with a drain-source voltage rating of 40V. The device supports continuous drain currents up to 26A at case temperature and features a low on-resistance of 2.5 milliohms at Vgs=10V. It is designed for high-efficiency switching applications, offering a maximum power dissipation of 138W and an extended junction temperature range from -55°C to +150°C.
Feature Summary
- Single N-channel enhancement mode configuration
- Low on-resistance for efficient power switching
- High thermal performance in compact PowerDI5060-8 package
Applications
- DC-DC converter circuits
- Power management modules
- Motor control systems
Procurement Notes
Verify the specific suffix 'SPS-13' against official Diodes Incorporated documentation to confirm reel packaging and tape-and-reel specifications. Ensure the component meets required RoHS compliance standards for your target market. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Selection Notes
Select this component when a 40V N-channel MOSFET with low Rds(on) is required in a PowerDI5060-8 footprint. Consider the 26A current capability and 138W power dissipation limits relative to your thermal design. Verify that the gate threshold voltage and charge characteristics align with your driver circuit requirements for optimal switching performance.
Part Context
This component belongs to the DMTH series of automotive-grade MOSFETs from Diodes Incorporated. These devices are engineered for robust performance in demanding environments, often featuring AEC-Q101 qualification. The PowerDI family provides enhanced thermal conductivity and reduced parasitic inductance compared to traditional packages, supporting modern high-density PCB layouts.
Replacement Considerations
Consult official substitution guides for verified equivalents. Potential alternatives may include other 40V N-channel MOSFETs in the PowerDI5060-8 package from Diodes Incorporated or other manufacturers, provided pinouts and electrical parameters match exactly.
