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Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：83 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4450 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.9W (Ta), 180W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMTH4004LK3Q-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 40V and a continuous drain current of 100A at a case temperature of +25°C. The device offers a typical on-resistance of 3mΩ at VGS=10V and 5mΩ at VGS=4.5V, with a total gate charge of 83nC at VGS=10V. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO252 (DPAK) package.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient environments
- Features 100% unclamped inductive switching testing for robust end applications
- Low on-resistance minimizes power losses during conduction
- Low gate charge reduces switching losses
Applications
- Engine-management systems
- Body control electronics
- DC-DC converters
- Motor control
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2500 units per reel. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements if utilized in automotive supply chains. Ensure compatibility with IATF 16949 certified manufacturing facilities for designated automotive change control processes.
Selection Notes
Select this component when designing circuits requiring a 40V N-channel MOSFET capable of handling 100A continuous current. Consider the low thermal resistance from junction to case for efficient heat dissipation in power management designs. Evaluate the gate threshold voltage characteristics against the available drive voltage levels to ensure optimal switching performance and minimal conduction losses.
Part Context
This part belongs to the DMTH4004 series of automotive-grade MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is packaged in a TO252 form factor. The product line is designed to meet stringent automotive reliability standards, offering enhanced thermal performance and robust switching capabilities compared to standard industrial components.
Replacement Considerations
Cross-reference with other Diodes Incorporated parts sharing the DMTH4004 prefix for alternative packaging options such as PowerDI variants. Verify pinout compatibility and electrical parameter alignment before substituting with components from other manufacturers.
