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The DMTH4004LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum continuous drain current of 100A at TC = +25°C, with a static drain-source on-resistance of 2.5mΩ at VGS = 10V and 50A. Total gate charge is specified at 82.2nC at VGS = 10V. It utilizes the PowerDI5060-8 surface-mount package.
Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm that the component meets RoHS directives and REACH SVHC requirements for your target market. Ensure the selected variant matches the required thermal and electrical specifications for the intended application environment.
Select this component when high efficiency and robustness are required in automotive or industrial environments. The wide operating temperature range supports high ambient conditions. Evaluate the thermal resistance characteristics relative to the PCB copper area to ensure adequate heat dissipation during continuous operation.
This part belongs to the DMTH4004 series from Diodes Incorporated, designed for high-performance power management. It is distinct from other variants such as the DMTH4004LPSQ, which carries separate automotive qualification documentation. The standard version focuses on general high-reliability applications.
The DMTH4004LPSQ is an automotive-compliant alternative available under a separate datasheet. Verify if AEC-Q qualification is mandatory for the end application before selecting the standard or qualified variant.