DMTH4004LPSQ-13

$0.48

Description：MOSFET N-CH 40V 100A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:6b5462dc1777 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 100A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：69.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5220 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.83W (Ta), 125W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH4004LPSQ-13

Overview

The DMTH4004LPSQ-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 surface-mount package. It features a drain-source voltage rating of 40V and supports continuous drain currents up to 100A at case temperatures of +25°C and +100°C. The device exhibits a maximum on-resistance of 2.5mΩ at VGS=10V and 5mΩ at VGS=4.5V. Total gate charge reaches 69.6nC at VGS=10V. It operates within a junction temperature range of -55°C to +175°C and includes an exposed drain pad for thermal management.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications.
Rated for operation in high ambient temperature environments up to +175°C.
Manufactured in IATF 16949 certified facilities to meet specific automotive change control requirements.
Subjected to 100% unclamped inductive switching (UIS) testing during production.

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the complete part number DMTH4004LPSQ-13 against official Diodes Incorporated documentation to confirm the PowerDI5060-8 package and tape & reel packing quantity. Ensure that design specifications align with the electrical characteristics detailed in datasheet DS40414 Rev. 6. Confirm compliance with RoHS directives and halogen-free status if required by the end application.

Selection Notes

Select this component when designing circuits requiring robust performance in automotive environments with high thermal demands. The low on-resistance minimizes conduction losses, while the low gate charge aids in reducing switching losses. Verify that the system's gate drive voltage meets the thresholds for optimal RDS(ON) performance and that the PCB layout accommodates the exposed drain pad for effective heat dissipation.

Part Context

This part belongs to the DMTH4004 series of N-channel MOSFETs designed specifically for automotive use. It utilizes silicon technology and is packaged in the PowerDI5060-8 form factor. The device is lead-free, RoHS compliant, and manufactured using green materials free from halogens and antimony. It is intended for applications demanding high reliability and stringent quality standards.

Replacement Considerations

Consult the official Diodes Incorporated product selector or datasheets for direct replacements. Verify pinout compatibility, package dimensions, and electrical ratings such as BVDSS, ID, and RDS(ON). Ensure any substitute component also meets AEC-Q101 qualification and IATF 16949 manufacturing requirements if used in automotive contexts.