DMTH4004LPSW-13

$0.52

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:a758434f20f0 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：26A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：82.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：2.6W (Ta), 138W (Tc)
Operating Temperature：175°C (TA)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH4004LPSW-13

Overview

The DMTH4004LPSW-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features a drain-source voltage (V_DSS) of 40V and a maximum continuous drain current (I_D) of 100A at TC = +25°C. The device offers a low on-state resistance (R_DS(ON)) of 2.5mΩ at V_GS = 10V and 4mΩ at V_GS = 4.5V. Total gate charge (Q_g) is 82.2nV at V_GS = 10V. Operating temperature ranges from -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient environments.
Guaranteed 100% unclamped inductive switching capability for robust end applications.
Low R_DS(ON) minimizes conduction power losses.
Low Q_g reduces switching energy losses.

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel carrier configuration as documented in the official datasheet. Confirm that the 'SWP' designation aligns with the required PowerDI5060-8/SWP (Type UX) mechanical footprint for your PCB layout. Ensure compliance with RoHS and halogen-free requirements if mandated by your project specifications.

Selection Notes

Select this component when a 40V rating and high current handling up to 100A are required in a compact surface-mount form factor. The low thermal resistance allows for efficient heat dissipation through the exposed drain pad. Consider the gate threshold voltage characteristics for compatibility with your driver logic levels, particularly at lower gate voltages like 4.5V.

Part Context

This part belongs to the DMTH4004 series of N-channel MOSFETs designed for high-efficiency power management. It utilizes silicon technology and is packaged in the PowerDI5060-8/SWP format. The device is qualified to JEDEC standards for high reliability and is available in an automotive-compliant variant under a separate datasheet.

Replacement Considerations

The automotive-compliant version DMTH4004LPSWQ is available under a separate datasheet. Verify pinout and thermal characteristics match before substitution. No other direct substitutes are confirmed in the provided documentation.