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Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A TO263AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：68.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4305 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：4.7W (Ta), 136W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The DMTH4004SCTBQ-13 is a 40V N-channel enhancement mode MOSFET in a TO263AB package. It supports a continuous drain current of 100A at TC=+25°C and features a maximum on-resistance of 3mΩ at VGS=10V. The device operates within a junction temperature range of -55°C to +175°C, with a total power dissipation of 136W at TC=+25°C. It includes an internal body diode with a forward voltage of 1.3V at IS=100A.
Feature Summary
- Qualified to AEC-Q101 standards for high reliability in automotive environments
- Rated for operation up to +175°C junction temperature
- Features 100% unclamped inductive switching capability
- Low gate charge minimizes switching losses
Applications
- Engine Management Systems
- Body Control Electronics
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 800-unit tape and reel packaging configuration. Confirm that the component meets PPAP requirements if mandated by the target automotive assembly specifications. Ensure compliance with RoHS directives and verify lead-free finish status before final procurement authorization.
Selection Notes
Select this component when designing systems requiring robust performance under high ambient temperatures up to 175°C. The low on-resistance and optimized gate charge characteristics make it suitable for applications demanding minimized power and switching losses. Verify thermal management capabilities align with the specified junction-to-case thermal resistance values.
Part Context
This part belongs to the DMTH4004SC series of automotive-grade N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the TO263AB (D2PAK) surface-mount case style designed for efficient heat dissipation through the exposed drain pad. The product line is engineered specifically to address the stringent durability and reliability demands of modern automotive electronic architectures.
Replacement Considerations
Direct substitutes include other 40V TO263AB N-channel MOSFETs from Diodes Incorporated such as the DMTH4004SPS-13 or DMNH4004SPSW-13, provided they meet the required 100A current rating and AEC-Q101 qualification standards.
