DMTH4005SK3Q-13

$0.71

Description：MOSFET N-CH 40V 95A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d5cf8a559eec Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 95A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：49.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3062 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 100W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMTH4005SK3Q-13

Overview

The DMTH4005SK3Q-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source breakdown voltage and a maximum continuous drain current of 95A at 25°C case temperature. The device exhibits a typical static on-resistance of 3.6mΩ at VGS=10V and ID=50A, with a maximum rating of 4.5mΩ. It operates within a junction temperature range of -55°C to +175°C and utilizes a TO252 (DPAK) surface-mount package.

Feature Summary

Qualified to AEC-Q101 standards for automotive reliability
Rated for operation up to +175°C junction temperature
100% unclamped inductive switching tested
Low gate charge minimizes switching losses

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as documented in the manufacturer's ordering information. Confirm that the component meets IATF 16949 manufacturing facility requirements if PPAP capability is required for the intended application. Ensure compliance with RoHS and Halogen-free specifications during procurement.

Selection Notes

Select this component for high-current applications requiring low conduction losses and robust avalanche energy handling. The TO252 package provides efficient thermal dissipation through the exposed drain pad. Verify that the system gate drive voltage supports the specified threshold characteristics and that the operating ambient temperatures remain within the rated limits for optimal performance.

Part Context

This part belongs to the DMTH4005 series of automotive-grade power MOSFETs from Diodes Incorporated. It is designed specifically for environments demanding high reliability and stringent quality controls. The device integrates silicon technology optimized for low on-resistance and fast switching speeds suitable for modern automotive electronic architectures.

Replacement Considerations

Consult official substitution lists for compatible alternatives such as the DMTH4005LK3-13 or other members of the DMTH400x family. Verify pinout compatibility and electrical parameter alignment before replacing the original component in existing designs.