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Product Detailed Parameters
- Description：MOSFET N-CH 40V 16.8A/70A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：16.8A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1895 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.6W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMTH4007LK3-13 is a 40V N-channel enhancement mode MOSFET in a TO252 package. It features a maximum drain-source on-resistance of 7.3mΩ at VGS=10V and 9.8mΩ at VGS=4.5V. Continuous drain current reaches 70A at TC=+25°C, with a pulsed current of 80A. The device supports an operating temperature range from -55°C to +175°C and includes a body diode with a forward voltage of 1.2V at IS=20A.
Feature Summary
- Advanced technology minimizes on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Small form factor thermally efficient package enables higher density end products.
- Qualified to AEC-Q101 standards for high reliability.
Applications
- Power Management Functions
- DC-DC Converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the base part number matches the exact electrical specifications required for the target circuit design. Ensure compliance with RoHS directives and halogen-free requirements as defined by the manufacturer's green product standards before finalizing procurement.
Selection Notes
Select this component when low conduction losses are critical for system efficiency. The TO252 package provides a balance between thermal dissipation capabilities and board space constraints. Verify gate drive voltage compatibility, as on-resistance varies significantly between 4.5V and 10V drive levels. Consider the junction-to-case thermal resistance for heatsinking requirements in continuous operation scenarios.
Part Context
This part belongs to Diodes Incorporated's DMTH series of N-channel MOSFETs designed for general-purpose power switching applications. The 'LK3' designation indicates the specific lead-free and green molding compound construction within the TO252 (DPAK) case style. It represents a generation focused on optimizing the figure of merit through reduced gate-drain charge and on-resistance.
Replacement Considerations
The automotive-compliant variant DMTH4007LK3Q is available under a separate datasheet. Verify pinout compatibility and thermal characteristics when substituting other 40V N-channel MOSFETs in the TO252 package.
