DMTH4007LPSQ-13

$0.93

Description：MOSFET N-CH 40V 15.5A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:100ee458891f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 15.5A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：15.5A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：29.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1895 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.7W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH4007LPSQ-13

Overview

The DMTH4007LPSQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device utilizes a PowerDI5060-8 surface-mount package with a maximum profile height of 1.1mm. Key electrical parameters include a maximum on-resistance of 6.5mΩ at VGS=10V and 9.8mΩ at VGS=4.5V, both measured at ID=20A. Continuous drain current reaches 85A at TC=+25°C. Total gate charge is 29.1nC at VGS=10V.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards with PPAP capability.
Rated for operation in high ambient temperature environments up to +175°C.
Features 100% unclamped inductive switching testing for robust end-application reliability.
Utilizes a thermally efficient package design to minimize on-state losses.

Applications

Motor controls
DC-DC converters
Load switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2500 units per reel. Confirm that the component meets IATF 16949 manufacturing facility requirements if your application demands specific change control protocols associated with automotive-grade parts. Ensure compatibility with RoHS 3 directives during final procurement validation.

Selection Notes

Select this component when designing circuits requiring low on-resistance at standard logic gate drive voltages of 4.5V or 10V. The PowerDI5060-8 package provides a compact footprint suitable for space-constrained designs while maintaining thermal performance. Consider the 40V breakdown voltage limit and the 175°C operating temperature ceiling when evaluating thermal management strategies for the target system.

Part Context

This part belongs to the DMTH4007 series of N-channel MOSFETs from Diodes Incorporated. It shares the same core die characteristics as other variants in the family but differs in packaging and tape-and-reel specifications. The 'LPSQ' designation indicates the specific PowerDI5060-8 form factor and automotive qualification status.

Replacement Considerations

Consult official cross-reference documentation for verified substitutes. Direct replacements must match the 40V BVDSS, PowerDI5060-8 package dimensions, and AEC-Q101 qualification status to ensure mechanical and electrical compatibility without redesigning the PCB layout.

FAQ

Is the DMTH4007LPSQ-13 qualified for automotive use?

Yes, the device is qualified to AEC-Q101 standards and is supported by a PPAP, making it suitable for automotive applications requiring specific change control.