DMTH4007SPSW-13

$0.32

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:03619ab9c1f6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：15.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2082 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH4007SPSW-13

Overview

The DMTH4007SPSW-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum on-resistance of 7.6mΩ at VGS=10V and ID=20A, with a continuous drain current rating of 100A at TC=+25°C. The device supports an operating junction temperature range from -55°C to +175°C and includes a total power dissipation capability of 136W when mounted directly to the case.

Feature Summary

Rated for operation up to +175°C junction temperature
Thermally efficient PowerDI5060-8 package design
Low input capacitance for fast switching performance
Lead-free finish compliant with RoHS standards

Applications

Notebook battery power management
DC-DC converters
Motor controls

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2500 units as defined in the manufacturer's documentation. Confirm that the component meets all applicable environmental directives, including RoHS and Halogen-free requirements, before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring high conversion efficiency and low on-state losses within a thin profile form factor. Ensure the thermal design accommodates the specified thermal resistance values and that the gate drive voltage aligns with the optimal RDS(ON) characteristics for the intended load conditions.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI®5060-8/SWP (Type UX) surface-mount package, which provides a compact footprint suitable for space-constrained electronic designs while maintaining robust electrical performance.