DMTH4008LPSQ-13

$0.97

Description：MOSFET N-CH 40V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d8c650ed53f1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：14.4A (Ta), 64.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：8.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1088 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.99W (Ta), 55.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH4008LPSQ-13

Overview

The DMTH4008LPSQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +175°C. The device utilizes a PowerDI5060-8 surface-mount package. Key electrical parameters include a maximum continuous drain current of 64.8A at TC = +25°C, a static drain-source on-resistance of 8.8mΩ at VGS = 10V, and a gate threshold voltage ranging from 1V to 3V.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Qualified to AEC-Q101 standards with PPAP capability for automotive applications
Features low on-state resistance to minimize power losses during conduction
Includes 100% unclamped inductive switching testing in production

Applications

Brushless DC motor controls
DC-DC converters
Load switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2,500 units. Confirm that the component meets the necessary RoHS and halogen-free requirements for your assembly process. Ensure the design accommodates the specified thermal characteristics and operating temperature limits defined in the datasheet.

Selection Notes

Select this component when an automotive-grade N-channel MOSFET with a 40V rating is required. Consider the PowerDI5060-8 package dimensions for PCB layout constraints. Evaluate the thermal resistance values against your system's heat dissipation capabilities to ensure reliable operation under expected load conditions.

Part Context

This part belongs to the DMTH series of automotive-qualified MOSFETs from Diodes Incorporated. It is designed specifically for high-reliability applications requiring robust performance in demanding thermal environments. The product line supports various automotive standards and manufacturing certifications.

Replacement Considerations

Consult official manufacturer substitution guides or cross-reference tools for verified alternative part numbers. Do not assume functional compatibility based solely on similar voltage or current ratings without reviewing detailed electrical specifications.