DMTH4014LDVW-13

$0.21

Description：MOSFET 2N-CH 40V 10.2A PWRDI3333
Series：-

SKU:f4267fd1d2a3 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 10.2A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：10.2A (Ta), 27.5A (Tc)
Rds On (Max) @ Id, Vgs：15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：750pF @ 20V
Power - Max：1.16W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8 (Type UXD)
Grade：-
Qualification：-

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DMTH4014LDVW-13

Overview

The DMTH4014LDVW-13 is a dual N-channel enhancement mode MOSFET in a PowerDI3333-8/SWP package. It features a 40V drain-source voltage rating and operates up to +175°C. At VGS=10V, the maximum on-resistance is 15mΩ with a continuous drain current of 27.5A. At VGS=4.5V, the resistance is 25mΩ with a current of 22.0A. The device includes wettable flanks for inspection and supports 100% UIS testing.

Feature Summary

Dual N-channel configuration within a compact PowerDI3333-8/SWP case
Rated for high ambient temperatures up to +175°C
Wettable flank design facilitates improved optical inspection
100% unclamped inductive switching (UIS) tested in production

Applications

Wireless charging systems
DC-DC converters
Power management circuits

Procurement Notes

Verify the specific ordering suffix '-13' against official Diodes Incorporated documentation to confirm the 3,000-unit tape and reel packaging quantity. Ensure the component matches the PowerDI3333-8/SWP mechanical dimensions and terminal finish specifications required by the assembly process.

Selection Notes

Select this component for applications requiring low on-state losses and superior switching performance. The dual channel architecture allows for efficient power handling in space-constrained designs. Verify that the gate drive voltage meets the requirements for the desired RDS(ON) level.

Part Context

This part belongs to the DMTH4014LDVW series from Diodes Incorporated. It utilizes silicon technology and is housed in a lead-free, RoHS-compliant plastic mold compound. The marking code H4D identifies the product type on the top surface alongside the date code.

Replacement Considerations

Consult the manufacturer's official documentation for verified substitute part numbers. Cross-referencing requires matching electrical ratings, thermal characteristics, and physical footprint dimensions.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.