DMTH4014LPD-13

DMTH4014LPD-13

$1.09
  • Description:MOSFET 2N-CH 40V 10.6A PWRDI50
  • Series:-

SKU:b51a31947929 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 40V 10.6A PWRDI50
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:10.6A (Ta), 43.6A (Tc)
  • Rds On (Max) @ Id, Vgs:15mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:733pF @ 20V
  • Power - Max:2.41W (Ta), 42.8W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PowerDI5060-8
  • Grade:Automotive
  • Qualification:AEC-Q101

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DMTH4014LPD-13

Overview

The DMTH4014LPD-13 is a dual N-channel enhancement mode MOSFET rated for 40V drain-source voltage and operating up to +175°C. It features a maximum on-resistance of 15mΩ at VGS=10V and 25mΩ at VGS=4.5V, supporting continuous drain currents of 43.6A at TC=+25°C. The device utilizes a PowerDI5060-8 package with thermal resistance from junction to case of 3.5°C/W. Key dynamic characteristics include a total gate charge of 10.2nC at VGS=10V and a body diode reverse recovery time of 11.9ns.

Feature Summary

  • Dual configuration providing two independent N-channel enhancement mode transistors in a single compact package.
  • Rated for operation in high ambient temperature environments up to +175°C junction temperature.
  • Validated for reliability through 100% unclamped inductive switching (UIS) testing during production.
  • Totally lead-free and fully RoHS compliant, ensuring halogen and antimony-free construction.

Applications

  • Backlighting circuits
  • Power management functions
  • DC-DC converters

Procurement Notes

Verify the specific package variant required, as the datasheet indicates availability in both PowerDI5060-8 (Type C) and PowerDI5060-8/SWP (Type UXD). Confirm that the ordering suffix -13 corresponds to the correct tape and reel quantity of 2,500 units. Ensure design compatibility with the specified thermal resistance values under your intended mounting conditions.

Selection Notes

Select this component when a dual MOSFET solution is needed for space-constrained designs requiring high efficiency. The low on-resistance minimizes conduction losses, while the fast switching speed and low input capacitance support high-frequency operation. Consider the 40V rating and current capabilities relative to the specific load requirements and thermal management strategy of the target application.

Part Context

This part belongs to Diodes Incorporated's DMTH series of dual MOSFETs designed for power management applications. It shares the PowerDI5060-8 form factor with other devices in the lineup but offers specific electrical characteristics tailored for high-efficiency switching. The dual configuration allows for synchronized control or bridge topologies within a minimal footprint.

Replacement Considerations

Direct substitutes within the same family include parts like DMTH4014LPS-13, provided the package type matches the design constraints. Verify pinout compatibility and ensure that the replacement maintains the required 40V rating and thermal performance specifications.

FAQ

What is the difference between the PowerDI5060-8 Type C and Type UXD packages?

Both are valid package options for this part number. Type C refers to the standard PowerDI5060-8 outline, while Type UXD refers to the PowerDI5060-8/SWP variant. Both utilize the same internal die and electrical characteristics but may have slight dimensional differences in the lead frame geometry.

Is the DMTH4014LPD suitable for automotive applications?

The standard DMTH4014LPD is not explicitly qualified for automotive use. For automotive applications requiring AEC-Q101/102 qualification and PPAP capability, customers must contact Diodes Incorporated directly for specific automotive-grade variants.

How does the on-resistance vary with temperature?

The on-resistance increases as the junction temperature rises. The datasheet provides graphs showing the normalized on-resistance variation from -55°C to +175°C, indicating higher conduction losses at elevated temperatures compared to room temperature operation.

DMTH4014LPD-13DMTH4014LPD-13
$1.09
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