DMTH4014LPDWQ-13

$0.47

Description：MOSFET 2N-CH 40V 10.6A PWRDI50
Series：-

SKU:4b35f5314760 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 10.6A PWRDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：10.6A (Ta), 43.6A (Tc)
Rds On (Max) @ Id, Vgs：15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：733pF @ 20V
Power - Max：2.4W (Ta), 42.8W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：PowerDI5060-8 (SWP)
Grade：Automotive
Qualification：AEC-Q101

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DMTH4014LPDWQ-13

Overview

The DMTH4014LPDWQ is a dual N-channel enhancement mode MOSFET rated for 40V drain-source voltage. It features a maximum on-resistance of 15mΩ at VGS=10V and 25mΩ at VGS=4.5V, supporting continuous drain currents of 43.6A at TC=+25°C. The device operates within a junction temperature range of -55°C to +175°C and utilizes a PowerDI5060-8/SWP package.

Feature Summary

Dual N-channel configuration with low on-resistance for high conversion efficiency
Qualified to AEC-Q101 standards with PPAP capability for automotive applications
Rated for operation up to +175°C suitable for high ambient temperature environments
100% unclamped inductive switching (UIS) tested in production

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity and carrier type. Confirm that the component meets all applicable RoHS directives and halogen-free requirements for your assembly process. Ensure the selected variant aligns with the intended thermal management strategy given the package characteristics.

Selection Notes

Select this component when a dual N-channel topology is required within a compact surface-mount footprint. Evaluate the thermal resistance values against your system's heat dissipation capabilities. Consider the gate threshold voltage specifications to ensure compatibility with your control logic levels.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio designed for robust performance in demanding environments. It is manufactured in IATF 16949 certified facilities to support strict change control requirements typical of automotive supply chains.

Replacement Considerations

Consult official substitution lists for verified alternatives. Verify pinout compatibility and electrical parameter margins before replacing existing components in established designs.