DMTH4014SPSW-13

$0.19

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:78bb64cde2c2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：43.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：14.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：805 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：4W (Ta), 46.9W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH4014SPSW-13

Overview

The DMTH4014SPSW-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 (SWP) package. It features a drain-source voltage rating of 40V and a maximum continuous drain current of 43.5A at +25°C case temperature. The device exhibits a typical on-resistance of 11.4mΩ at VGS=10V and ID=20A, with a maximum of 14.8mΩ. Key dynamic parameters include a total gate charge of 10.6nC and an input capacitance of 805pF. It supports junction temperatures up to +175°C.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C.
Manufactured with wettable flank technology to facilitate improved optical inspection.
Verified for reliability through 100% unclamped inductive switching (UIS) testing during production.
Designed to minimize power losses via low on-state resistance while maintaining fast switching speeds.

Applications

High frequency switching circuits
Synchronous rectification systems
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the component meets RoHS directives and is halogen and antimony free if environmental compliance is required for the assembly process. Ensure the design accommodates the specified thermal resistance values for the intended operating conditions.

Selection Notes

Select this component when a 40V N-channel MOSFET with low conduction losses is required. The PowerDI5060-8 package provides a compact footprint suitable for space-constrained designs. Consider the 175°C junction temperature rating for applications involving elevated thermal stress. Verify that the gate drive requirements align with the specified threshold voltage and gate charge characteristics.

Part Context

This part belongs to the DMTH series of MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is packaged in the PowerDI5060-8 form factor. The product is designed for general-purpose power management applications requiring robust performance and high efficiency in modern electronic systems.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed based on electrical specifications and physical dimensions to ensure compatibility with existing circuit designs and board layouts.

FAQ

Is the DMTH4014SPSW-13 qualified for automotive applications?

For automotive applications requiring specific change control or qualification to AEC-Q100/101/200 standards, customers must contact Diodes Incorporated directly as standard products may not inherently meet these specific automotive requirements.