DMTH43M7LFGQ-13

$0.38

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:55942d32d2de Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2182 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.5W (Ta), 65.2W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMTH43M7LFGQ-13

Overview

The DMTH43M7LFGQ-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source on-resistance of 3.0mΩ at VGS=10V and 5.0mΩ at VGS=5V. Continuous drain current reaches 100A at TC=+25°C, with a pulsed drain current capability of 400A. The device supports an operating temperature range from -55°C to +175°C and includes a total power dissipation rating of 65.2W at TC=+25°C.

Feature Summary

Qualified to AEC-Q101 standards for automotive applications
Rated for operation in high ambient temperature environments up to +175°C
Includes 100% unclamped inductive switching testing in production

Applications

Motor control
DC-DC converters
Power management

Procurement Notes

Verify the specific ordering suffix matches project requirements. The -13 suffix indicates a 3,000-unit tape and reel carrier. Confirm that the component meets all applicable RoHS directives and IATF 16949 manufacturing facility standards required for the intended deployment.

Selection Notes

Select this component when low on-state losses are critical for system efficiency. The device offers excellent gate charge times suitable for high-frequency switching. Ensure thermal design accommodates the specified junction-to-case resistance for optimal performance under load.

Part Context

This part belongs to the DMTH43 series of automotive-grade silicon MOSFETs. It utilizes Diodes Incorporated's proprietary PowerDI3333-8 surface-mount technology. The series is designed to provide robust performance in compact form factors while maintaining compliance with stringent automotive reliability standards.