DMTH43M8LFVW-13

$0.31

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:a04e724ebf95 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：23A (Ta), 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2737 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.6W (Ta), 65W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMTH43M8LFVW-13

Overview

The DMTH43M8LFVW-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source on-resistance of 4.3mΩ at VGS=10V and 7.5mΩ at VGS=4.5V, supporting continuous drain currents of 96A at TC=25°C and 68A at TC=100°C. The device operates within a junction temperature range of -55°C to +175°C, with a total power dissipation of 65W at TC=25°C and 3.6W at TA=25°C. Key electrical parameters include a gate threshold voltage of 1V to 2.5V, a total gate charge of 36.9nC at VGS=10V, and a body diode forward voltage of 0.8V typical.

Feature Summary

Rated for operation up to +175°C junction temperature for high ambient environments
Features wettable flank terminals to improve optical inspection reliability
Undergoes 100% unclamped inductive switching (UIS) testing in production
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the PowerDI3333-8 (SWP) Type UX package variant matches the mechanical requirements for the intended PCB layout. Ensure compliance with the specified moisture sensitivity level and terminal finish specifications during storage and assembly processes.

Selection Notes

Select this component when low on-state resistance is critical for minimizing conduction losses in power management applications. The wide operating temperature range supports designs requiring robustness in high ambient heat. Consider the thermal resistance values and package size constraints when designing the heat dissipation strategy for the target system.

Part Context

This part belongs to the DMTH43M8 series of N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8 surface-mount package, which provides a compact footprint suitable for space-constrained designs. The series is engineered to balance low RDS(ON) with superior switching performance characteristics.

Replacement Considerations

The datasheet lists DMTH43M8LFVW-7 as an alternative packing quantity option within the same product family. Verify pinout compatibility and electrical parameter equivalence before substituting with other manufacturers' components.