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Product Detailed Parameters
- Description：MOSFET N-CHANNEL 40V 100A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：3.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：38.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2693 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：88W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMTH43M8LK3Q-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum on-resistance of 3.6mΩ at VGS=10V and 5.2mΩ at VGS=5V, supporting continuous drain currents up to 100A at TC=+25°C. Packaged in a TO252 (DPAK) format with a matte tin finish, it is designed for high ambient temperature environments.
Feature Summary
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching tested
- Low RDS(ON) minimizes on-state losses
- Excellent Qgd x RDS(ON) figure of merit
Applications
- Power-management functions
- DC-DC converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2500 units as documented. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements if automotive change control protocols are necessary for your design. Ensure the TO252 package dimensions align with your PCB footprint specifications before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring robust performance in high ambient temperatures up to 175°C. The low on-resistance characteristics make it suitable for applications prioritizing efficiency and reduced conduction losses. Verify that the gate drive voltage supports the specified RDS(ON) thresholds at either 5V or 10V depending on system constraints.
Part Context
This part belongs to the DMTH43M8LK3Q series from Diodes Incorporated, specifically engineered for automotive-grade reliability. It utilizes silicon technology housed in a molded plastic TO252 package. The product is lead-free, RoHS compliant, and halogen/antimony free, adhering to strict environmental standards while maintaining high thermal performance.
Replacement Considerations
Consult official manufacturer documentation for verified equivalent part numbers. Cross-referencing requires matching critical parameters such as 40V BVDSS, TO252 packaging, and AEC-Q101 qualification status to ensure functional compatibility.
