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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 110A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：110A (Tc)
- Rds On (Max) @ Id, Vgs：4.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：41.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2796pF @ 20V
- Power - Max：3W (Ta), 80.2W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8 (Type UXD)
- Grade：-
- Qualification：-
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Overview
The DMTH43M8LPDW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI5060-8/SWP surface-mount packaging and operates with a drain-source voltage (Vds) of 40 V. The device supports a continuous drain current (Id) of 90 A at case temperature, with a maximum on-resistance (Rds(on)) of 7.8 mΩ at 10 V gate drive. Key switching parameters include a typical turn-on delay time of 5.2 ns, fall time of 11 ns, and total gate charge of 38.5 nC. It functions within a junction temperature range of -55°C to +175°C.
Feature Summary
- High-current capability in a compact PowerDI5060-8/SWP package
- Low on-resistance for improved power efficiency
- Fast switching characteristics suitable for high-frequency applications
Applications
- DC-DC converter output stages
- Motor control circuits
- Power distribution systems
Procurement Notes
Verify the specific suffix against official manufacturer documentation to confirm package variant and tape-and-reel specifications. Ensure compatibility with automated placement equipment requirements for the PowerDI5060-8/SWP footprint. Cross-reference electrical limits with system design constraints before finalizing procurement orders.
Selection Notes
Select this component when a low-profile, high-current single N-channel MOSFET is required for space-constrained designs. Compare Rds(on) and thermal dissipation capabilities against alternative packages like standard TDFN or TO-252 variants. Evaluate gate charge requirements against driver strength to ensure optimal switching performance without excessive losses.
Part Context
This part belongs to the DMTH series of automotive-grade MOSFETs from Diodes Incorporated. The series focuses on providing robust performance in harsh environments while maintaining small form factors. The DMTH43M8LPDW-13 specifically targets applications requiring high current density and fast switching speeds within the 40V voltage class.
Replacement Considerations
Direct substitutes may include other Diodes Incorporated parts within the DMTH43M8 family with compatible pinouts. Verify equivalent Rds(on), Id ratings, and package dimensions before substitution. Consult manufacturer cross-reference guides for validated alternatives that meet identical electrical and mechanical specifications.
