DMTH45M5LFVW-13

$0.24

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:68a6dad0d599 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：978 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.5W (Ta), 51W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMTH45M5LFVW-13

Overview

The DMTH45M5LFVW-13 is a 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8/SWP packaging and operates within a temperature range of -55°C to +175°C. Key electrical parameters include a maximum drain-source breakdown voltage (BVDSS) of 40V, a continuous drain current (ID) of 71A at TC = +25°C, and a static drain-source on-resistance (RDS(ON)) of 5.5mΩ at VGS = 10V. The device features a total gate charge (Qg) of 13.9nC at VGS = 10V.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features wettable flank technology to improve optical inspection reliability
Includes 100% unclamped inductive switching (UIS) testing for robustness
Designed with low RDS(ON) to minimize on-state power losses

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel carrier configuration. Confirm that the component meets RoHS compliance standards and halogen-free requirements as specified in the manufacturer's documentation. Ensure the application environment supports the rated thermal characteristics and junction temperature limits.

Selection Notes

Select this component when applications require a 40V rating combined with high current handling capabilities up to 71A. The PowerDI3333-8 package offers a compact footprint suitable for space-constrained designs. Consider the +175°C operating temperature rating for systems exposed to elevated thermal conditions.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It is designed to balance low on-state resistance with superior switching performance. The product line targets high-efficiency power management solutions requiring reliable operation under demanding thermal and electrical loads.