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The DMTH45M5LFVWQ-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source on-resistance of 5.5mΩ at VGS=10V and 7.9mΩ at VGS=4.5V, supporting continuous drain currents of 71A and 59A respectively at TC=+25°C. The device operates within a junction temperature range of -55°C to +175°C and includes wettable flank terminals for enhanced optical inspection.
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements if intended for automotive applications. Ensure the selected variant matches the required PowerDI3333-8/SWP package type.
Select this component when a 40V rating and low on-resistance are required for space-constrained designs. The PowerDI3333-8 package offers a compact footprint suitable for dense PCB layouts. Consider the +175°C thermal rating for applications operating in elevated ambient temperatures or requiring robust thermal performance.
This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. These devices are manufactured in IATF 16949 certified facilities and are designed to meet stringent automotive reliability standards. The series utilizes silicon technology optimized for high efficiency and thermal stability.
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed based on electrical parameters, package dimensions, and thermal characteristics to ensure functional compatibility.
Yes, the device is qualified to AEC-Q101, supported by a PPAP, and is manufactured in IATF 16949 certified facilities.
The device is rated to operate at a maximum junction temperature of +175°C.
Yes, the PowerDI3333-8/SWP package features wettable flanks to facilitate improved optical inspection during assembly.