DMTH45M5LFVWQ-13

DMTH45M5LFVWQ-13

$0.26
  • Description:MOSFET BVDSS: 31V~40V POWERDI333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:be53117fe3d9 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET BVDSS: 31V~40V POWERDI333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:18A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:5.5mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:13.9 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:978 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):3.5W (Ta), 51W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount, Wettable Flank
  • Supplier Device Package:PowerDI3333-8 (SWP) Type UX
  • Package / Case:8-PowerVDFN

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DMTH45M5LFVWQ-13

Overview

The DMTH45M5LFVWQ-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source on-resistance of 5.5mΩ at VGS=10V and 7.9mΩ at VGS=4.5V, supporting continuous drain currents of 71A and 59A respectively at TC=+25°C. The device operates within a junction temperature range of -55°C to +175°C and includes wettable flank terminals for enhanced optical inspection.

Feature Summary

  • Rated for operation up to +175°C for high ambient temperature environments
  • Low RDS(ON) minimizes on-state power losses
  • Excellent Qgd x RDS(ON) figure of merit (FOM)
  • Wettable flank design enables improved optical inspection

Applications

  • Automotive backlighting systems
  • Power-management functions
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements if intended for automotive applications. Ensure the selected variant matches the required PowerDI3333-8/SWP package type.

Selection Notes

Select this component when a 40V rating and low on-resistance are required for space-constrained designs. The PowerDI3333-8 package offers a compact footprint suitable for dense PCB layouts. Consider the +175°C thermal rating for applications operating in elevated ambient temperatures or requiring robust thermal performance.

Part Context

This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. These devices are manufactured in IATF 16949 certified facilities and are designed to meet stringent automotive reliability standards. The series utilizes silicon technology optimized for high efficiency and thermal stability.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed based on electrical parameters, package dimensions, and thermal characteristics to ensure functional compatibility.

FAQ

Is the DMTH45M5LFVWQ-13 qualified for automotive applications?

Yes, the device is qualified to AEC-Q101, supported by a PPAP, and is manufactured in IATF 16949 certified facilities.

What is the maximum junction temperature rating?

The device is rated to operate at a maximum junction temperature of +175°C.

Does the package include wettable flanks?

Yes, the PowerDI3333-8/SWP package features wettable flanks to facilitate improved optical inspection during assembly.

DMTH45M5LFVWQ-13DMTH45M5LFVWQ-13
$0.26
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