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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 79A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：79A (Tc)
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：978pF @ 20V
- Power - Max：3W (Ta), 60W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8 (Type UXD)
- Grade：-
- Qualification：-
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Overview
The DMTH45M5LPDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum on-resistance (RDS(ON)) of 5.5mΩ at VGS = 10V with a continuous drain current of 79A, or 7.9mΩ at VGS = 4.5V with 66A. Packaged in a PowerDI5060-8/SWP (Type UXD) format, it is supplied in tape and reel quantities of 2,500 units.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Features wettable flank design for improved optical inspection
- Includes 100% unclamped inductive switching (UIS) testing
Applications
- Wireless charging systems
- DC-DC converters
- Power management circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the standard 2,500-unit tape and reel packaging configuration. Confirm that the PowerDI5060-8/SWP package type matches the required footprint for the target PCB layout. Ensure compliance with RoHS and halogen-free requirements if mandated by the end-use environment.
Selection Notes
Select this component when high efficiency power management requires low on-state resistance combined with fast switching speeds. The dual N-channel configuration allows for compact designs in wireless charging and DC-DC applications. Verify thermal management capabilities against the specified RθJC values for the intended operating conditions.
Part Context
This part belongs to the DMTH series of dual N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI® 5060-8 package, which integrates two independent channels into a single surface-mount form factor designed for optimized thermal performance and space-constrained layouts.
Replacement Considerations
An automotive-compliant version is available under the separate datasheet designation DMTH45M5LPDWQ. Verify pinout compatibility and electrical parameter tolerances before substituting with other dual N-channel MOSFETs in the PowerDI5060-8 package.
