DMTH45M5LPSWQ-13

$1.04

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:12a026cf4772 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：86A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：978 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.5W (Ta), 72W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH45M5LPSWQ-13

Overview

The DMTH45M5LPSWQ is a 40V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source voltage of 40V and a continuous drain current of 86A at TC=+25°C. The on-resistance is 5.5mΩ max at VGS=10V and 7.9mΩ max at VGS=4.5V. Operating temperature ranges from -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C junction temperature
100% unclamped inductive switching (UIS) tested in production
Wettable flank design for improved optical inspection
Qualified to AEC-Q101 standards with PPAP capability

Applications

High frequency switching
Synchronous rectifications
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel carrier configuration. Confirm that the component meets IATF 16949 manufacturing requirements if automotive change control protocols are necessary for the intended deployment environment.

Selection Notes

Select this component for applications requiring robust high-temperature performance up to 175°C. The low on-resistance supports efficient power conversion, while the wettable flank feature facilitates reliable automated optical inspection during surface mount assembly processes.

Part Context

This device belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes silicon technology within a molded plastic PowerDI5060-8 package. The construction includes matte tin annealed terminals over a copper leadframe, ensuring compliance with RoHS directives and halogen-free specifications.

Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Cross-referencing requires matching BVDSS, RDS(ON), package dimensions, and thermal characteristics to ensure functional compatibility without manual inference.