DMTH45M5SPDW-13

$1.50

Description：MOSFET 2N-CH 40V 79A PWRDI50
Series：-

SKU:ca6177224b86 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 79A PWRDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：79A (Tc)
Rds On (Max) @ Id, Vgs：5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1083pF @ 20V
Power - Max：3.3W (Ta), 60W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：PowerDI5060-8 (Type UXD)
Grade：-
Qualification：-

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DMTH45M5SPDW-13

Overview

The DMTH45M5SPDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 40V and a typical static drain-source on-resistance (RDS(ON)) of 4.3mΩ at VGS=10V, with a maximum rating of 5.5mΩ. The device supports a continuous drain current (ID) of 79A at TC=+25°C and a pulsed drain current (IDM) of 316A. Operating within a temperature range of -55°C to +175°C, it utilizes the PowerDI5060-8/SWP package.

Feature Summary

Rated for operation up to +175°C junction temperature
100% Unclamped Inductive Switching (UIS) tested in production
Wettable flank design for improved optical inspection

Applications

Wireless charging systems
DC-DC converters
Power management circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the component meets RoHS 3 compliance standards and is halogen and antimony free as defined by the manufacturer's green product specifications before finalizing procurement orders.

Selection Notes

Select this component for high-efficiency power management applications requiring low on-state resistance and superior switching performance. Ensure the design accommodates the 40V drain-source voltage limit and verify thermal management strategies are adequate for the specified junction-to-case thermal resistance values under expected load conditions.

Part Context

This part belongs to the DMTH series of dual N-channel MOSFETs from Diodes Incorporated. It is distinct from the automotive-compliant variant, which is designated as DMTH45M5SPDWQ and documented under a separate datasheet. Both variants share similar electrical characteristics but differ in qualification standards.

Replacement Considerations

No official substitute part numbers are listed in the documentation. When evaluating alternatives, ensure the replacement matches the 40V BVDSS, 5.5mΩ RDS(ON) max, and PowerDI5060-8/SWP package dimensions. Verify compatibility with existing PCB pad layouts and thermal requirements.