DMTH45M5SPSWQ-13

$0.30

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:5553a3752d9c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：86A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1083 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.5W (Ta), 72W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH45M5SPSWQ-13

Overview

The DMTH45M5SPSWQ-13 is a 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI5060-8/SWP (Type UX) packaging and supports junction temperatures up to +175°C. The device features a maximum drain-source on-resistance of 5.5mΩ at VGS=10V, with a continuous drain current rating of 86A at TC=+25°C. It includes wettable flank terminals for improved optical inspection and meets AEC-Q101 automotive qualification standards.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features wettable flank terminals to facilitate improved optical inspection
Undergoes 100% unclamped inductive switching testing during production

Applications

High-frequency switching circuits
Synchronous rectification systems
DC-DC converters

Procurement Notes

Verify the complete part number DMTH45M5SPSWQ-13 against official Diodes Incorporated documentation to confirm the specific PowerDI5060-8/SWP package configuration and tape & reel packing quantity. Ensure that any ordering suffixes match the required carrier specifications exactly as defined in the manufacturer's datasheet.

Selection Notes

Select this component for applications requiring robust performance under high thermal stress conditions. The low on-resistance minimizes power losses, while the fast switching speed and low input capacitance support efficient high-frequency operations suitable for demanding automotive electronic architectures.

Part Context

This MOSFET belongs to the DMTH series designed specifically for stringent automotive requirements. It is supported by a PPAP and manufactured in IATF 16949 certified facilities. The device is lead-free, RoHS compliant, and halogen and antimony free.

Replacement Considerations

Consult official Diodes Incorporated substitution guides or contact the manufacturer directly for verified equivalent part numbers. Do not assume cross-compatibility based solely on similar voltage or current ratings without explicit manufacturer confirmation.