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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：891 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.8W (Ta), 68W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH47M2LPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 40V and operates with a junction temperature range from -55°C to +175°C. The device is housed in a PowerDI5060-8 (SWP) package with wettable flank terminals. At a case temperature of +25°C, the continuous drain current reaches 73.0A. The static drain-source on-resistance (RDS(ON)) is rated at a maximum of 7.3mΩ at VGS = 10V and 20A, or 12mΩ at VGS = 4.5V and 10A.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient environments
- Features wettable flank terminals to facilitate improved optical inspection during assembly
- Undergoes 100% unclamped inductive switching (UIS) testing in production for reliability
- Designed to minimize on-state resistance while maintaining fast switching speed
Applications
- High frequency switching power supplies
- Synchronous rectification circuits
- DC-DC converter modules
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2500 units per carrier. Confirm that the component meets RoHS compliance standards and is halogen-free if required by your manufacturing specifications. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.
Selection Notes
Select this component when a low-voltage, high-current N-channel MOSFET is required for efficient power management. The 40V rating and low RDS(ON) make it appropriate for applications demanding minimal conduction losses. Consider the +175°C thermal rating for designs operating in elevated temperature conditions without excessive derating.
Part Context
This part belongs to the DMTH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices utilize silicon technology and are packaged in the PowerDI family, which provides compact surface-mount solutions. The series is engineered to balance low on-resistance with robust switching performance for modern power electronics.
Replacement Considerations
For automotive applications requiring specific change control, AEC-Q100 qualified parts, or IATF 16949 certified manufacturing, consult the separate datasheet for DMTH47M2LPSWQ. Verify pinout compatibility and thermal characteristics before substituting with other 40V MOSFETs in the PowerDI5060-8 package.
