DMTH47M2SPSWQ-13

$0.26

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:767a625def73 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：897 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.3W (Ta), 68W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH47M2SPSWQ-13

Overview

The DMTH47M2SPSWQ is a 40V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum on-resistance of 7.5mΩ at VGS=10V and ID=20A, with a continuous drain current of 73A at TC=+25°C. The device supports an operating junction temperature up to +175°C and includes wettable flank terminals for improved optical inspection.

Feature Summary

Rated for operation up to +175°C junction temperature
Wettable flank design facilitates automated optical inspection
Qualified to AEC-Q101 standards for automotive reliability
100% unclamped inductive switching tested in production

Applications

High frequency switching
Synchronous rectification
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 2,500 units. Confirm that the 'Type UX' packaging variant matches your board assembly requirements. Ensure the component meets all applicable RoHS and halogen-free specifications for your target market regulations.

Selection Notes

Select this component when high ambient temperature tolerance is critical. The low on-resistance minimizes conduction losses in power conversion stages. The AEC-Q101 qualification makes it suitable for automotive environments requiring PPAP documentation and IATF 16949 manufacturing compliance.

Part Context

This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It utilizes the PowerDI5060-8 (SWP) surface-mount package. The device is designed to replace older through-hole or larger footprint solutions while providing robust performance in space-constrained automotive electronics.