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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI808
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：460A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：0.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：117.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：10053 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：5.6W (Ta), 428W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI8080-5
- Package / Case：SOT-1235
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Overview
The DMTH4M70SPGWQ-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI8080-5 package. It features a maximum on-resistance of 0.7mΩ at VGS=10V and supports a continuous drain current of 460A at TC=+25°C. The device operates up to +175°C junction temperature, with a thermal resistance (junction-to-case) of 0.35°C/W. It includes an internal body diode with a forward voltage of 1.2V max at IS=20A.
Feature Summary
- Rated for high ambient temperature environments with operation up to +175°C
- 100% Unclamped Inductive Switching (UIS) tested in production for reliability
- Wettable flank design enables improved optical inspection during assembly
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2000-unit tape and reel carrier configuration. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements if utilized in automotive supply chains. Ensure compliance with IATF 16949 manufacturing facility certifications for intended application contexts.
Selection Notes
Select this component when designing circuits requiring low conduction losses and robust switching performance under high thermal stress. The PowerDI8080-5 package provides significant thermal dissipation capabilities suitable for power-dense designs. Evaluate gate charge parameters against driver capabilities to optimize switching speed and minimize dynamic losses.
Part Context
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio designed for stringent reliability standards. It utilizes a molded plastic 'Green' molding compound with UL flammability rating 94V-0. The device is lead-free, halogen-free, and antimony-free, adhering to RoHS directives.
Replacement Considerations
The datasheet explicitly states that the DMTH4M70SPGWQ is not recommended for new designs. Engineers should utilize the DMTH4M72SPGWQ as the designated replacement or updated alternative within the same product family.
