DMTH4M75LPSW-13

$0.88

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:f2b3e9c2ab11 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：337A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：0.75mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：111 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：9308 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.5W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH4M75LPSW-13

Overview

The DMTH4M75LPSW-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI5060-8/SWP package. It features a maximum on-resistance of 0.75mΩ at VGS=10V and 1.3mΩ at VGS=4.5V, supporting continuous drain currents of 337A and 256A respectively at TC=+25°C. The device operates up to +175°C junction temperature with a thermal resistance (junction-to-case) of 1.0°C/W.

Feature Summary

Rated for operation up to +175°C junction temperature
Features wettable flank design for improved optical inspection
Includes 100% unclamped inductive switching (UIS) testing

Applications

Engine-management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific suffix 'SWP' indicates the Type UX carrier configuration when ordering. Confirm RoHS compliance and Halogen-free status requirements against project specifications. Ensure the selected component matches the exact datasheet revision DS46573 Rev. 3 - 2 for accurate electrical parameters.

Selection Notes

Select this component for applications requiring low on-state losses and high current handling within a thin profile. Evaluate thermal management needs based on the 1.0°C/W junction-to-case resistance. Verify gate drive voltage compatibility with the specified RDS(ON) thresholds at 10V and 4.5V.

Part Context

This part belongs to Diodes Incorporated's new generation MOSFET lineup designed to minimize RDS(ON) while maintaining superior switching performance. It utilizes a molded plastic Green molding compound with UL Flammability Classification Rating 94V-0.