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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：205A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：131 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8289 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 167W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (SWP)
- Package / Case：8-PowerTDFN
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Overview
The DMTH6002LPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and utilizes the PowerDI5060-8 package with wettable flank technology. The device offers a maximum on-resistance (RDS(ON)) of 2mΩ at VGS=10V and 3.3mΩ at VGS=4.5V, supporting continuous drain currents of 205A at TC=+25°C. It operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient environments
- Features wettable flank packaging to improve optical inspection reliability
- Includes 100% unclamped inductive switching (UIS) testing during production
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the standard 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance standards and halogen-free requirements as defined by the manufacturer's quality definitions. Ensure the procurement channel sources directly from authorized distributors to guarantee product authenticity and traceability.
Selection Notes
Select this component when designing circuits requiring low conduction losses and robust thermal performance in compact surface-mount layouts. The 60V rating and high current capacity make it appropriate for automotive-grade power distribution tasks. Evaluate the thermal resistance characteristics against your system's heat dissipation capabilities to ensure stable operation under continuous load conditions.
Part Context
This part belongs to the DMTH series of N-channel MOSFETs designed for high-efficiency power management. It shares the PowerDI5060-8 form factor with other devices in the family but is distinguished by its specific 60V breakdown voltage and optimized on-resistance profile. The series targets applications demanding superior switching speeds and minimized on-state losses.
Replacement Considerations
For automotive-specific change control or AEC-Q100 qualification, consider the DMTH6002LPSWQ variant. Verify pin compatibility and electrical parameters before substituting with other 60V MOSFETs in the PowerDI5060-8 package.
