DMTH6004LPSWQ-13

$0.89

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:328729ca1dd3 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：78.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5399 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta), 138W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH6004LPSWQ-13

Overview

The DMTH6004LPSWQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates up to a +175°C junction temperature. The device utilizes a PowerDI5060-8/SWP package. At VGS=10V, the maximum on-resistance is 3.1mΩ with a continuous drain current of 100A at TC=+25°C. Gate threshold voltage ranges from 1V to 3V. Total gate charge is 78.3nC at VGS=10V.

Feature Summary

Qualified to AEC-Q101 standards for automotive applications
Rated for operation in high ambient temperature environments up to +175°C
Features low on-resistance to minimize power losses
Includes 100% unclamped inductive switching testing in production

Applications

Primary switches in isolated DC-DC converters
Synchronous rectifiers
Load switches

Procurement Notes

Verify component authenticity through official Diodes Incorporated channels or authorized distributors. Confirm that the received parts match the specific DMTH6004LPSWQ-13 designation and packaging requirements. Ensure compliance with RoHS directives and verify IATF16949 manufacturing certification if required for your supply chain quality standards.

Selection Notes

Select this component when designing circuits requiring robust performance in high-temperature automotive environments. Consider its low gate charge for efficient switching applications. Evaluate thermal management needs based on the specified junction-to-case resistance. Ensure the driving circuitry can provide sufficient gate voltage to achieve the lowest possible on-resistance values.

Part Context

This part belongs to the DMTH series of automotive-grade MOSFETs designed for high reliability. It is manufactured in IATF16949 certified facilities and supports PPAP documentation. The PowerDI5060-8 package provides a compact footprint suitable for space-constrained PCB layouts while maintaining effective heat dissipation capabilities for high-current operations.

Replacement Considerations

Consult the official datasheet for direct pin-compatible alternatives within the same family. Verify that any substitute maintains the required 60V rating and meets AEC-Q101 qualification standards. Ensure thermal characteristics and package dimensions are compatible with existing board designs before implementation.