DMTH6004SK3Q-13

$1.18

Description：MOSFET N-CH 60V 100A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2a7bf87420de Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 100A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：95.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4556 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.9W (Ta), 180W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMTH6004SK3Q-13

Overview

The DMTH6004SK3Q-13 is a surface-mount N-channel enhancement mode MOSFET designed for automotive applications. It features a 60V drain-source voltage rating and supports a continuous drain current of 100A at TC = +25°C. The device exhibits a maximum on-resistance of 3.8mΩ at VGS = 10V and ID = 90A, with a typical gate charge of 95.4nC. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO252 (DPAK) package.

Feature Summary

Rated for operation up to +175°C junction temperature
100% unclamped inductive switching capability
Low RDS(ON) minimizes conduction power losses
Low QG minimizes switching energy losses

Applications

Engine management systems
Body control electronics
DC-DC converters
Motor control

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2,500 units. Confirm that the AEC-Q101 qualification and PPAP capability meet your project's automotive supply chain requirements. Ensure the TO252 footprint matches your PCB layout guidelines before finalizing procurement.

Selection Notes

Select this component when high thermal stability up to 175°C is required in compact designs. The low gate charge and on-resistance make it suitable for efficient power switching in automotive environments. Verify that the 60V breakdown voltage aligns with system bus voltages and transient conditions.

Part Context

This part belongs to the DMTH6004 series from Diodes Incorporated, specifically tailored for automotive-grade reliability. It utilizes an N-channel enhancement mode silicon technology optimized for robust performance under high ambient temperatures and demanding electrical loads.

Replacement Considerations

Check datasheets for alternative N-channel MOSFETs with matching 60V ratings and comparable RDS(ON) values. Ensure any substitute maintains the same TO252 package dimensions and thermal characteristics to fit existing board layouts without modification.