DMTH6005LFG-7

$0.43

Description：MOSFET N-CH 60V 19.7A/100A PWRDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:d5c50bce7fb5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 19.7A/100A PWRDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：19.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3150 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.38W (Ta), 75W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMTH6005LFG-7

Overview

The DMTH6005LFG-7 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 packaging and supports junction temperatures up to +175°C. Key electrical parameters include a maximum drain-source voltage of 60V, a continuous drain current of 100A at TC=+25°C, and a static drain-source on-resistance of 4.1mΩ at VGS=10V. The device features a total gate charge of 48.7nC and an avalanche energy rating of 171mJ.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features low on-state resistance to minimize conduction losses
Small form factor package enables higher density end products
100% unclamped inductive switching tested in production

Applications

Synchronous Rectification
Motor Control
DC-DC Converters
Power Management

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. Confirm that the required quantity matches the tape and reel specifications provided by the manufacturer. Ensure compliance with RoHS directives and confirm lead-free finish requirements are met for the intended assembly process.

Selection Notes

Select this component when high efficiency power management requires minimizing on-state resistance while maintaining robust switching performance. Consider the small form factor for applications demanding higher product density. Evaluate thermal characteristics and operating temperature range suitability for the target environment.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It is designed specifically for high-efficiency power management applications where low on-state resistance and superior switching performance are critical. The device is housed in a thermally efficient PowerDI3333-8 package.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on similar voltage or current ratings without verifying pinout and thermal characteristics.

FAQ

Is the DMTH6005LFG-7 suitable for automotive applications?

For automotive applications requiring specific change control, AEC-Q100/101/200 qualification, PPAP capability, and manufacturing in IATF 16949 certified facilities, contact Diodes Incorporated directly.