DMTH6005LFGQ-13

$0.39

Description：MOSFET BVDSS: 41V~60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:17ffebf6dba0 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：17A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3223 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.38W (Ta), 75W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMTH6005LFGQ-13

Overview

The DMTH6005LFGQ-13 is a 60V N-channel enhancement mode MOSFET designed for automotive applications. It operates up to +175°C and features a PowerDI3333-8 package. Key electrical parameters include a maximum on-resistance of 4.1mΩ at VGS=10V, continuous drain current of 98A at TC=+25°C, and total gate charge of 47.5nC at VGS=10V. The device supports avalanche energy of 171mJ.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Manufactured in IATF 16949 certified facilities with AEC-Q101 qualification and PPAP capability
Small form factor thermally efficient package enables higher density end products

Applications

Synchronous rectification
Motor control
DC-DC converters
Power management

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel carrier configuration as defined in the manufacturer's ordering information. Confirm that the component meets the required automotive change control standards and PPAP documentation needs for your specific assembly line integration.

Selection Notes

Select this component when designing circuits requiring robust performance in high-temperature automotive environments. The low RDS(ON) minimizes conduction losses, while the small footprint allows for compact board layouts. Ensure thermal management aligns with the specified junction-to-case resistance for optimal power dissipation.

Part Context

This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It utilizes the PowerDI3333-8 package, which occupies significantly less board area compared to traditional SO-8 packages. The series is engineered to meet stringent automotive reliability requirements through rigorous testing protocols.