DMTH6005LK3-13

$1.29

Description：MOSFET N-CH 60V 90A DPAK
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6dcb732b74a6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 90A DPAK
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2962 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 100W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMTH6005LK3-13

Overview

The DMTH6005LK3-13 is a 60V N-channel enhancement mode MOSFET in a TO252 (DPAK) package. It features a maximum drain-source voltage of 60V and a continuous drain current of 90A at TC = +25°C. The device offers a typical RDS(ON) of 4.5mΩ at VGS = 10V and ID = 50A, with a maximum of 5.6mΩ under the same conditions. It supports an operating junction temperature range from -55°C to +175°C and includes 100% unclamped inductive switching testing.

Feature Summary

Engineered for high efficiency power management by minimizing on-state resistance while maintaining superior switching performance.
Rated for operation up to +175°C, making it suitable for high ambient temperature environments.
Subjected to 100% unclamped inductive switching testing to ensure reliable and robust end applications.
Qualified to JEDEC standards for high reliability and available as an automotive-compliant part.

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units when placing orders. Confirm that the required variant meets the standard commercial specifications rather than the separate automotive-compliant datasheet for DMTH6005LK3Q if AEC-Q qualification is not explicitly required for the design. Ensure the TO252 package dimensions align with the PCB footprint layout provided in the mechanical data section.

Selection Notes

Select this component for designs requiring low conduction losses due to its low RDS(ON) characteristics. Consider the thermal resistance values and power dissipation limits when designing heat sinks or copper pad layouts. Verify gate charge requirements against driver capabilities to optimize switching speeds. Ensure the application voltage and current ratings remain within the specified safe operation area curves provided in the datasheet.

Part Context

This part belongs to Diodes Incorporated's line of N-channel enhancement mode MOSFETs designed for power management. It utilizes a molded plastic package with matte tin annealed terminals over a copper leadframe. The device is RoHS compliant and halogen-free, adhering to environmental directives. It is distinct from the automotive-grade version which follows a separate datasheet specification.

Replacement Considerations

The automotive-compliant alternative is DMTH6005LK3Q. Verify pinout compatibility and electrical parameter equivalence before substitution. No other direct substitutes are documented in the official datasheet.

FAQ

Is the DMTH6005LK3 qualified for automotive applications?

The standard DMTH6005LK3 is qualified to JEDEC standards for high reliability. An automotive-compliant version, DMTH6005LK3Q, is available under a separate datasheet.