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Product Detailed Parameters
- Description：MOSFET N-CH 60V 100A PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：20.6A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：47.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2962 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 150W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH6005LPSQ-13 is a 60V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source breakdown voltage of 60V and a continuous drain current of 100A at TC = +25°C. The device has a typical on-resistance of 4.4mΩ at VGS = 10V and ID = 50A, with a total gate charge of 47.1nC at VGS = 10V. It operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Qualified to AEC-Q101 standards with PPAP capability
- Features 100% unclamped inductive switching testing
Applications
- High-frequency switching circuits
- Synchronous rectification systems
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2500 units as defined in the manufacturer's documentation. Confirm that the component meets automotive quality requirements by checking for IATF 16949 certification status and compliance with RoHS directives during the procurement process.
Selection Notes
Select this component for applications requiring high thermal stability and robustness against inductive loads. The low on-resistance minimizes conduction losses, while the low gate charge reduces switching energy dissipation. Ensure the design accommodates the specified thermal resistance values for the intended ambient conditions.
Part Context
This part belongs to the DMTH series of automotive-grade power MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a lead-free, halogen-free PowerDI5060-8 package designed for surface mount assembly. The device is specifically engineered to meet stringent automotive industry reliability standards.
Replacement Considerations
Consult official substitution lists from Diodes Incorporated for verified alternatives. Cross-reference pin configurations and electrical parameters such as RDS(ON) and BVDSS when evaluating potential replacements.
