DMTH6005LPSWQ-13

$0.77

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:4dcf5a8ec437 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：20.6A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2962 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.2W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH6005LPSWQ-13

Overview

The DMTH6005LPSWQ-13 is a 60V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source on-resistance of 5.5mΩ at VGS=10V and ID=50A, with a continuous drain current rating of 100A at TC=25°C. The device supports an operating junction temperature up to +175°C and includes a body diode with a forward voltage of 0.9V at IS=50A.

Feature Summary

Qualified to AEC-Q101 standards for automotive applications
Rated for operation up to +175°C junction temperature
Features 100% unclamped inductive switching capability

Applications

High-frequency switching
Synchronous rectification
DC-DC converters

Procurement Notes

Verify the specific suffix 'Q' indicates AEC-Q101 qualification and PPAP capability when sourcing. Confirm the manufacturer is Diodes Incorporated and the package type matches PowerDI5060-8/SWP (Type UX). Ensure the ordering quantity aligns with the standard tape and reel packing quantity of 2500 units.

Selection Notes

Select this component for designs requiring high thermal stability and robustness in automotive environments. The low on-resistance minimizes conduction losses, while the low gate charge reduces switching energy. Verify that the application's thermal management can support the specified power dissipation limits under expected load conditions.

Part Context

This part belongs to the DMTH6005 series of N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI®5060-8/SWP surface-mount package designed for efficient heat dissipation. The product line targets high-reliability sectors, specifically automotive electronics, where strict quality control and extended temperature ranges are mandatory.

Replacement Considerations

Consult official datasheets for cross-reference candidates within the same voltage and current ratings. Verify pinout compatibility and thermal resistance characteristics before substitution. Ensure any alternative part meets the required AEC-Q101 qualification if automotive compliance is necessary.